Silicones for Low-K Dielectrics
As scaling or miniaturization of computer chips continues, features such as transistors and interconnects get progressively closer to one another. This requires insulating dielectric that separates these components to get thinner and thinner and reduce crosstalk between the conducting features which negatively affects the performance of an integrated circuit. The diminishing effectiveness of traditional SiO2 led research to introduce carbon doped silicon dioxide or CDO (carbon doped oxide) deposited via traditional CVD methods. The dielectric constant of SiO2 is ~4.0 versus reported values of 2.6 down to 2.0 using porous CDO.
SiVance leads the way in providing these unique precursors used to produce CDOs for semiconductor industry. Over 60 years of silane chemistry experience and process development expertise is leveraged to economically scale up each precursor from lab to multi-ton production plant. By employing these unique strengths, SiVance has forged strong relationships with electronic chemical suppliers around the world to confidentially and consistently produce quality precursors for their low-K product lines.
If you do not see the specific product for your needs, SiVance has the capabilities to custom manufacture silanes and silicones to your exact specifications. Please contact us.